1. product profile 1.1 general description 200 w ldmos power transistor with improved video bandwidth for base station applications at frequencies from 2500 mhz to 2700 mhz. [1] test signal: 3gpp test model 1; 64 dpch; par = 8.4 db at 0.01 % probability on ccdf per carrier; 5 mhz carrier spacing. 1.2 features and benefits ? excellent ruggedness ? high efficiency ? low thermal resistance providing excellent thermal stability ? decoupling leads to enable improved video bandwidth performance (150 mhz typical) ? designed for broadband operation (2500 mhz to 2700 mhz) ? lower output capacitance for improved performance in doherty applications ? designed for low memory effects prov iding excellent pre-distortability ? internally matched for ease of use ? integrated esd protection ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? rf power amplifiers for base stations and multi carrier applications in the 2500 mhz to 2700 mhz frequency range blc8g27ls-210pv power ldmos transistor rev. 1 ? 9 february 2015 product data sheet table 1. typical performance typical rf performance at t case = 25 ? c in a common source class-ab production test circuit. test signal f i dq v ds p l(av) g p ? d acpr 5m (mhz) (ma) (v) (w) (db) (%) (dbc) 2-carrier w-cdma 2600 to 2700 1730 28 65 17 30 ? 29 [1]
blc8g27ls-210pv all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all ri ghts reserved. product data sheet rev. 1 ? 9 february 2015 2 of 15 nxp semiconductors blc8g27ls-210pv power ldmos transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values [1] continuous use at maximum temperature will affect the reliability, for details refer to the on-line mtf calculator. 5. thermal characteristics table 2. pinning pin description simplified outline graphic symbol 1drain2 2drain1 3 gate1 4 gate2 5source [1] 6 video decoupling drain1 7n.c. 8n.c. 9 video decoupling drain2 d d d table 3. ordering information type number package name description version blc8g27ls-210pv - air cavity plastic earless flanged package; 8 leads sot1251-3 table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 65 v v gs gate-source voltage ? 0.5 +13 v t stg storage temperature ? 65 +150 ?c t j junction temperature [1] - 225 ?c table 5. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case t case =80 ?c; p l = 65 w 0.22 k/w
blc8g27ls-210pv all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all ri ghts reserved. product data sheet rev. 1 ? 9 february 2015 3 of 15 nxp semiconductors blc8g27ls-210pv power ldmos transistor 6. characteristics 7. test information 7.1 ruggedness in class-ab operation the blc8g27ls-210pv is capable of withstanding a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds =28 v; i dq = 1730 ma; p l = 200 w (cw); f = 2600 mhz. 7.2 impedance information [1] z s and z l defined in figure 1 . table 6. dc characteristics t j = 25 ? c per section, unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d =1.44ma 65 - - v v gs(th) gate-source threshold voltage v ds = 10 v; i d = 144 ma 1.5 1.9 2.3 v v gsq gate-source quiescent voltage v ds = 28 v; i d = 865 ma 1.6 2 2.4 v i dss drain leakage current v gs =0v; v ds =28v - - 2.8 ? a i dsx drain cut-off current v gs =v gs(th) + 3.75 v; v ds =10v - 26.9 - a i gss gate leakage current v gs =11v; v ds = 0 v - - 280 na g fs forward transconductance v ds =10v; i d = 7.2 a - 11.2 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d =5.4a -0.10- ? table 7. rf characteristics test signal: 2-carrier w-cdma; 3gpp test model 1 with 64 dpch; pa r = 8.4 db at 0.01 % probability on the ccdf; f 1 = 2602.5 mhz; f 2 = 2607.5 mhz; f 3 = 2692.5 mhz; f 4 = 2697.5 mhz; rf performance at v ds =28v; i dq =1730ma; t case =25 ? c; unless otherwise specified; in a water cooled class-ab test circuit. symbol parameter conditions min typ max unit g p power gain p l(av) =65w 15.8 17 - db ? d drain efficiency p l(av) =65w 27 30 - % rl in input return loss p l(av) =65w - ? 13 ? 8db acpr 5m adjacent channel power ratio (5 mhz) p l(av) =65w - ? 29 ? 26 dbc table 8. typical impedance measured load-pull data per section; i dq = 865 ma; v ds = 28 v. f z s [1] z l [1] (mhz) (? ) (? ) 2500 2.58 ? j5.80 1.60 ? j4.32 2600 3.40 ? j6.30 1.65 ? j4.44 2700 6.35 ? j6.45 1.77 ? j4.75
blc8g27ls-210pv all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all ri ghts reserved. product data sheet rev. 1 ? 9 february 2015 4 of 15 nxp semiconductors blc8g27ls-210pv power ldmos transistor 7.3 vbw in a class-ab operation the blc8g27ls-210pv shows 150 mhz (typic al) video bandwidth (imd third-order intermodulation inflection point) in a class-ab test circuit in the 2.6 ghz to 2.7 ghz band at v ds = 28 v and i dq =1.73a. fig 1. definition of transistor impedance d d i g u d l q = / = 6 j d w h v ds = 28 v; i dq = 1730 ma. (1) low (2) high fig 2. vbw capacity in class-ab test circuit d d d f d u u l h u v s d f l q j 0 + ] , 0 ' , 0 ' , 0 ' g % f g % f g % f , 0 ' , 0 ' , 0 ' , 0 ' , 0 ' , 0 ' , 0 ' , 0 ' , 0 '
blc8g27ls-210pv all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all ri ghts reserved. product data sheet rev. 1 ? 9 february 2015 5 of 15 nxp semiconductors blc8g27ls-210pv power ldmos transistor 7.4 test circuit [1] american technical ce ramics type 800b or capacitor of same quality. [2] murata or capacitor of same quality. printed-circuit board (pcb): rogers 4350b with a thickness of 0.76 mm. see ta b l e 9 for a list of components. fig 3. component layout table 9. list of components see figure 3 for component layout. component description value remarks c1, c2 multilayer cerami c chip capacitor 1.6 pf [1] atc 800b c3, c8, c10, c14, c18 multilaye r ceramic chip capacitor 24 pf [1] atc 800b c4, c7 multilayer cerami c chip capacitor 100 nf [2] murata c5, c6 multilayer cera mic chip capacitor 1 ? f [2] murata c9, c12, c16, c19 multilayer ceramic chip capacitor 470 ? f, 5 0 v [2] murata c11, c17 multilayer cerami c chip capacitor 220 nf [2] murata c13, c15 electrolytic capacitor > 470 ? f, 6 3 v r1, r2 chip resistor 4.7 ? , 1%tolerance smd 0805 r3 chip resistor 10 ? , 1%tolerance smd 0805 r4 chip resistor 100 ? , 1%tolerance smd 2010 d d d & |